1.3-µm InP-based photonic crystal surface-emitting lasers with flat regrown interface using MOVPE regrowth

Abstract – Photonic-crystal surface-emitting laser (PCSEL) is a promising semiconductor laser that surpass conventional ones, such as vertical cavity surface emitting lasers and edge-emitting lasers. The novel features of PCSELs have already been utilized to attain high-power, high-beam-quality operation [1, 2] and the control of polarization and beam-patterns [3] in the near-infrared wavelength range around 940 nm. In contrast, there have been few reports on PCSELs with emission wavelengths of 1.3 µm [4], which is attractive for eye-safe car sensing and optical telecommunication applications. Here, for the first time, we demonstrate an electrically pumped, InP-based PCSEL fabricated by metal organic vapor phase epitaxy (MOVPE) regrowth, which lase at 1.3 µm under room temperature with a low threshold.